maximum ratings: (t a =25c) symbol units peak repetitive reverse voltage v rrm 40 v continuous forward current i f 1.0 a peak repetitive forward current, tp 1ms i frm 3.5 a forward surge current, tp = 8ms i fsm 10 a power dissipation p d 1.45 w * operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 86.20 c/w * electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i r v r = 5.0v 10 a i r v r = 8.0v 20 a i r v r = 15v 50 a bv r i r = 100a 40 v v f i f = 10ma 0.29 v v f i f = 100ma 0.36 v v f i f = 500ma 0.45 v v f i f = 1.0a 0.55 v c j v r = 4.0v, f= 1.0mhz 50 pf t rr i f =i r = 500ma, i rr = 50ma, r l = 50? 15 ns tlm322 case central semiconductor corp. tm r2 (10-april 2006) description: the central semiconductor CTLSH1-40M322 is a low v f schottky diode designed for applications where small size and operational efficiency are prime requirements. with a maximum power dissipation of 1.45w, and a very small package footprint (approximately equal to the sot-363), this tiny leadless module (tlm) is capable of dissipating up to 4 times the power of similar devices in a comparable surface mount package. marking code: cba CTLSH1-40M322 surface mount high current, low v f silicon schottky diode tiny leadless module tm * fr-4 epoxy pc board with copper mounting pad area of 21 mm 2 low v f features: ? high current (i f = 1.0a) ? low forward voltage drop (v f =0.55v max @ 1.0a) ? high thermal efficiency applications: ? dc/dc converters ? reverse battery protection ? battery powered applications (cell phones, pdas, digital camera, mp3 players, etc.) bottom view top view
central semiconductor corp. tm tlm322 case - mechanical outline r2 (10-april 2006) lead code: 1) cathode 2) anode 3) anode CTLSH1-40M322 surface mount high current, low v f silicon schottky diode tiny leadless module tm for standard mounting refer to tlm322 package details suggested mounting pad layout for maximum power dissipation (dimensions in mm) marking code: cba
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